ROHM Semiconductor at PCIM 2014: novelties and key products



ROHM Semiconductor will present its latest power management product designs at PCIM, a leading trade fair for power electronics, in Nuremberg, from May 20 – 22, 2014 (Hall 9, Booth 211). The novelties offer beneficial characteristics resulting from latest material research, packaging and manufacturing expertise and meet the ever increasing demand for energy efficiency, miniaturization, durability, reduced component count and costs while providing optimum performance at the same time.

1. Highly efficient Automotive standard LDOs
ROHM offers a wide line-up of standard LDOs qualified for Automotive applications and featuring low power consumption, high current efficiency, high voltage resistance and a wide operating temperature range (-40° to +125°) for maximum design flexibility. With these features, they are ideally suited to power Automotive applications such as clusters, climate control, radio or navigation.
2. Third Generation Fast Recovery Diodes
ROHM also demonstrates a broad line-up of highly reliable fast recovery diodes for multiple design options. Two new series have been added to the standard balance and soft recovery types, demonstrating the optimized performance for a range of applications: The low Vf RFNL series featuring ultra low Vf & soft recovery, suitable for power applications of 200W~300W like TV, PC and white goods. The new RFV series has been developed with a high speed switching & hard recovery behaviour, supporting high wattage applications such as UPS power, power conditioner and industrial modules.
3. 3rd Gen SiC MOSFETs = Trench Gate structure SiC MOSFETs
ROHM is providing advanced SiC MOSFET to the market since 2010. As from this year, ROHM will start to launch new SiC MOSFET based on Trench Gate structure technology. About half of the on-resistance of the ROHM conventional planar MOSFET is achievable over the whole temperature range. Of course, the high stability related to Gate oxide film and Body Diode is the same as with ROHM’s 2nd Gen SiC MOSFET. The result is minimum conductivity and switching loss as well as increased current-carrying capacity while keeping a compact format. ROHM will now showcase new, 3rd generation products based on this state-of-the-art technology.

ROHM Semiconductor