Driver Circuit, Power Distribution, Power Management, Power Semiconductors
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The gate drivers of the DGD series from Diodes simplify the switching of two N-channel MOSFETs or two IGBTs in a half-bride configuration. They are suitable for a wide range of applications.
The DGD2103M, DGD-2104M and DGD2304 gate drivers feature a floating high-side driver to simplify the switching of two N-channel MOSFETs or two IGBTs in a half-bride configuration. They are suitable for a wide range of motor control and power supply applications in industrial automation and white goods, that require AC and DC motor control boards rated above 100 W, and LLC resonant converter power supply topologies.
The half-bridge configuration of the DGD2103M, DGD2104M and DGD2304 devices includes high-side (HS) and low-side (LS) drivers with high pulse-current outputs to provide effective switching of low RDS(on) MOSFETs or IGBTs, and increase overall system efficiencies. The floating high-side driver provides high-voltrage isolation allowing operation on power rails up to 600 V. Compatible with logic-level inputs from 2.5 V, these gate drivers further simplify the driving of power switches by enabling direct PWM control from 3.3 V MCUs, while the gate drive output operates up to the VCC supply (10 V to 20 V) to minimize conduction losses in the switch. The DGD2193M and DGD2104M have optimized Schmitt trigger inputs to avoid false triggering in noisy motor applications; while the DGD2304 provides a shorter internal deadtime, typically 100 ns, making it a better choice for high-frequency applications.
All three gate drivers are offered in an industry standard SO-8 package, providing pin-for-pin compatibility with competitive parts but with superior faster switching performance. From now on they are available on the e-commerce platform www.rutronik24.com.