High-speed switching MOSFETs tested to over 1350 V with 100% WLBI, applications include EV charging, energy storage, UPS and motor drives
SemiQ 1200 V SiC MOSFETs Six-Pack Modules with High Power Density and Low Switching Losses Enables Compact, Cost-Optimized Systems
SemiQ 1200 V SiC MOSFETs Six-Pack Modules with High Power Density and Low Switching Losses Enables Compact, Cost-Optimized Systems
04/16/2025
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact system-level designs at large scale.
The rugged, high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections and a Kelvin reference for stable operation.
The high-power-density modules benefit from low switching losses, as well as low junction-to-case thermal resistance and all parts have been tested beyond 1350 V, with 100% wafer-level burn in (WLBI).
They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies and UPS.
The modules are operational to 175oC junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40 and 80mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P and GCMX080A120B2T1P) that have a power dissipation of 263, 160 and 103 W respectively.
They conduct a continuous drain current of 29 - 30A, and a pulsed drain current of 70 A. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ and a turn-off switching energy of 0.02 - 0.11 mJ, with a switching time of 56 - 105 ns.
The module is available immediately in a 62.8 x 33.8 x 15 mm package including heatsink mountings.
Please visit SemiQ.com for specifications and to request samples or volume pricing.
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