SemiQ announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200V 40mΩ SiC MOSFET, expanding its portfolio of SiC power devices. This MOSFET complements the company’s existing 80mΩ SiC MOSFETs and SiC rectifiers at 650V, 1200V and 1700V.
SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications.
SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.
Michael Robinson, President and General Manager at SemiQ said, “Many thanks to those employees, associates, supporters and vendors who have worked tirelessly to build and qualify our latest SiC Power MOSFETs.”
SemiQ’s new 1200V 40mΩ SiC MOSFET is available in TO-247-4L and TO-247-3L packages and will soon be available in multiple module packages.
Samples are in stock at SemiQ and available through DigiKey, Mouser and Richardson Electronics. Please visit here for more.
