SemiQ announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200V 80mΩ SiC MOSFET, expanding its portfolio of SiC power devices. This MOSFET complements the company’s existing SiC rectifiers at 650V, 1200V and 1700V.
SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications.
As shown in the accompanying graph, this SemiQ device maintains its efficiency advantage over a full range of frequencies versus popular competitive products.
This gives designers more flexibility over a wider range of applications than other devices on the market.
SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.
Michael Robinson, President and General Manager at SemiQ said “Thanks to those employees, associates, supporters and vendors who have worked tirelessly to build and qualify our initial Gen2 SiC Power MOSFET which demonstrates the high-quality, optimized performance, and robust reliability that will be characteristic of a SemiQ MOSFET portfolio that is on the way.”
SemiQ’s new 1200V 80mΩ SiC MOSFET is available in a TO-247-3L package and will soon be available in a TO-247-4L package and a series of modules.
Samples are in stock at SemiQ and available through DigiKey, Mouser and Richardson Electronics. Please visit this site for specifications and to request samples or volume pricing.