DESIGN CENTERS: WIDE-BANDGAP SEMIS
SemiQ Gen4 1200 V and 750 V SiC MOSFETs Cut On-Resistance By 21% and Switching Energy By 11%
10/27/2026
GP4T011A120H targets EV Charging, Solar Inverters, Industrial Drives and High-Voltage DC/DC and DC/AC Converters
SemiQ Gen4 1200 V and 750 V SiC MOSFETs Cut On-Resistance By 21% and Switching Energy By 11%
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced its the availability of its fourth-generation QSiC™ silicon carbide power devices, launching a family of 1200 V and 750 V SiC bare dies and MOSFETs.
SemiQ Gen4 technology incorporates an optimized cell topology, featuring a 36% reduction in cell pitch, along with optimized JFET & P-well implantation. These design improvements enable a 23% reduction in specific on-resistance (Ron(sp)) versus previous generations, and have a higher current capability, reduced conduction losses, improved power density and increased overall system efficiency.
The family’s 1200 V devices reduce RDS(on) by 21% versus its Gen3 devices (11 vs. 14 Ω). They also offer an enhanced conduction and switching performance to reduce total switching energy by over 11% (1491 vs. 1677 mJ), while maintaining the same 5x5 mm die size as its Gen3 1200 V devices. This helps to reduce power losses and thermal load while supporting more compact power-conversion systems.
Unlike in previous generations, the Gen4 line up features a 750 V SiC MOSFET. This offers an even lower RDS(on) of 9 mΩ and has a total switching energy that is just 871 µJ.
The Gen4 MOSFET dies undergo wafer-level-gate-oxide gate burn-in screening at voltages exceeding 1400 V and 800 V respectively. Both are avalanche tested to 800 mJ.
Both devices are available in a 4-pin TO-247-4L MOSFET package and as a bare die. SemiQ is targeting the devices at high-power applications, including EV charging infrastructure, high-voltage DC/DC and DC/AC converters, solar inverters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), induction heating, welding, and motor drives.
Dr. Timothy Han, President at SemiQ said: “Our Gen4 SiC MOSFETs are designed to improve efficiency and thermal efficiency across a wide range of operating conditions and these devices help customers improve power density and efficiency. This enables the development of more compact systems with reduced losses for applications such as EV charging, renewable energy, and industrial drives.”
|
Part Numbers
|
VDC
|
Package
|
RDSon
|
|
GP4T009A075H
|
750 V
|
TO-247-4L
|
9 mΩ
|
|
GP4T009A075X
|
750 V
|
N/A
|
9 mΩ
|
|
GP4T011A120H
|
1200 V
|
TO-247-4L
|
11 mΩ
|
|
GP4T011A120X
|
1200 V
|
N/A
|
11mΩ
|
The Gen4 modules are available immediately. To learn more about silicon carbide solutions for demanding high-power applications, or to download datasheets for SemiQ’s QSiC™ Gen4 MOSFETs, please click here.
Related
