Best performance for isolated DC-DC primary and secondary MOSFET solutions
Shield Gate Technology Generation 2 100V 3.6mOhm MOSFET Designed for High-Density Power Supply Solutions
SUNNYVALE, Calif. – Alpha and Omega Semiconductor Limited announced the release of AONS66916 production utilizing the latest Alpha Shield Gate Technology Generation 2 (AlphaSGT2). The AONS66916 has best-in-class RDS(ON) * Qg (FOM) and more robust capability for a greater safety margin. In synchronous rectification, it is essential to optimize the reverse recovery charge and reduce the voltage overshoot. These attributes enable higher efficiency and robustness to critical high density telecom and server applications.
The AlphaSGT2 provides ~30% lower RDS(ON) compared to AlphaSGT1 and is designed to be more robust with significant avalanche energy improvement. AlphaSGT2 technology reduces both conduction and switching losses. Thus, with AlphaSGT2 technology, circuit designers can prevent paralleling devices for lower turn-on resistance, enabling higher power density in power supply applications.
Technical Highlights
|
Part Number |
VDS (V) |
VGS (V) |
RDS(ON)MAX (mOhms) |
Qg (typ) (nC) |
ID @ TA = 25°C (A) |
|
@ 10V |
|||||
|
AONS66916 |
100 |
±20 |
3.6 |
67 |
100 |
Pricing and Availability
The AONS66916 is immediately available in production quantities with a lead-time of 15 weeks. The unit price of 1,000 pieces is $ 1.2
For more information, please visit www.aosmd.com.
