SiC FET in D2PAK for 750V EV Designs
Qorvo unveiled an automotive-qualified SiC FET offering an RDS(on) of 9mΩ in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60mΩ, making them well suited for electric vehicle applications, including on-board chargers, DC/DC converters and PTC heater modules. The UJ4SC075009B7S features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its surface-mount package enables automated assembly flows. This 750V family complements Qorvo's existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures. These fourth generation SiC FETs leverage Qorvo's circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. The key features of the UJ4SC075009B7S include a threshold voltage VG(th) of typically 4.5V allowing 0 to 15V drive, a body diode operating with a VFSD of 1.1V, a reverse recovery Qrr of 338nC and a gate charge QG of 75nC. The AECQ101-qualified device operates at temperatures up to 175°C.
