SiC MOSFETs Reduce Switching and Conduction Losses


New Switching Amplifier is the Industry’s First Half H-Bridge to use Silicon Carbide MOSFET Technology with Integrated Gate Drive

TUCSON, Arizona, U.S.A. – The SA110 is Apex Microtechnology’s first high-current, high-voltage
half H-bridge to combine silicon carbide (SiC) MOSFETs with a gate drive in a single module device. This hybrid switching amplifier also features digital gate driver control, a very high 400 kHz MAX switching frequency, and 28 A of continuous output current.

The use of SiC technology can potentially impact a hybrid’s bill of materials, but any increase in cost will most likely be offset by a significant increase in performance. This includes reduced switching losses, lower conduction losses, and a low temperature dependency of RDS(on) over a wide operating temperature range. SiC MOSFETs also provide a reduction in power loss compared to the more commonly used silicon or IGBT options. By integrating the gate drive, switching behavior is greatly improved as parasitic impacts are reduced and easier to control.

The SA110 can operate off supply voltages up to 400 volts and features a typical switching frequency of 250 kHz, with a maximum frequency of 400 kHz. This hybrid is offered in a 12-pin PSIP package to provide a very compact footprint and is designed with under voltage lockout protection and active Miller clamping.
Complete product information is online at