ON Semiconductor has introduced a full SiC power module for solar inverter applications, which has been selected Delta to support its M70A three-phase PV string inverter portfolio.
The NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC boost diode with dual boost stage. The use of SiC technology delivers the low reverse recovery and fast switching characteristics needed to achieve the high levels of power efficiency required in applications such as solar inverters.
As part of ON Semiconductor's growing portfolio of Power Integrated Modules (PIMs) based on wide bandgap (WBG) technology, the NXH40B120MNQ offers a high level of integration with pin assignment optimized for inverter design. By using SiC components, the power module delivers low conduction and switching losses, enabling the use of higher switching frequencies, which contributes to higher inversion efficiency. The modules are designed for ease of use, with solderless press-fit connections and customer-defined thermal interface options, depending on customer preferences.
The NXH40B120MNQ full SiC power module is available in 2-channel and 3-channel variants, and is complemented by the NXH80B120MNQ0, a 2-channel module that integrates a 1200 V, 80mΩ SiC MOSFET with 1200 V, 20 A SiC diode.
For more information, visit On Semiconductor.
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