Silicon Labs announced the addition of Si828x version 2 to its isolated gate driver product family. This update allows the product family to effectively drive Silicon Carbide (SiC) Field Effect Transistor (FET) gates, addressing the growing market for half- and full-bridge inverters and power supplies that require improved power density, cooler operation and reduced switching losses.
Silicon Labs’ gate drivers have been tested with Wolfspeed SiC MOSFETs in cooperation with Wolfspeed, a premier provider of the most field-tested silicon carbide and GaN Power and RF solutions in the world.
“Electric vehicle adoption of silicon carbide is growing rapidly for power conversion and inverter applications because silicon carbide satisfies consumer demand for greater range and faster charging,” explained Jay Cameron, senior vice president and general manager of power products at Wolfspeed. “Gate drivers optimized for silicon carbide MOSFETs maximize the impact silicon carbide has on these applications.”
Wolfspeed SiC FETS when used with the Si828x family increase power and conversion efficiency which translates to fewer battery cells, more power delivered to electric motors and better operating costs. A test report including Silicon Labs’ Si828x and Wolfspeed’s C3M family is available here, as well as documentation for the half bridge reference design used in the testing here.
Si828x version 2 includes the following features:
Si828x version 2 isolated gate drivers are available now. For more information visit Silicon Labs' site.