SkyWater Chosen to Make High-Performance Si Power MOSFETs

SkyWater Technology and Applied Novel Devices Inc. announced the companies have entered into a licensing and manufacturing agreement to offer an improved standard process flow for Si power MOSFETs (metal oxide semiconductor field-effect transistors).  The partnership will enable AND to bring new power device products to market based on its proprietary and patented technologies and SkyWater’s high volume manufacturing capabilities.The licensing agreement will also enable SkyWater to offer the technology as a standard foundry process flow to improve system-level performance for low-voltage (12V – 30V) applications.

AND’s high-performance Si power MOSFETs are based on novel channel and substrate engineering to improve critical figures of merit of the power MOSFET. These products offer low R_DS(on) combined with low output capacitance/charge, low gate drive down to 2.5 V and an industry-first near zero reverse recovery charge enabling low switching losses in applications. Low R_DS(on) and reverse recovery will enable improved efficiency and, in some cases, reduced part counts, yielding lower cost and higher efficiency switching systems in applications such as power supplies and motor controls. Combination of low R_DS(on), low gate drive, and low output charge will also enable performance improvements in soft/resonant switching applications. Further, the thin body design makes the devices more robust against temperature variations and is anticipated to provide inherent radiation hardened characteristics.

Power MOSFETs are a class of discrete transistor devices specially designed for switching higher voltage/current signals typically used in power delivery circuits for a vast range of industrial, automotive and consumer applications. With the rise of semiconductor content across vertical markets and increase in wireless and battery powered IoT type devices, efficient power management solutions are in higher demand than ever.

In addition to MOSFETs, SkyWater also supports power management applications with IGBT and TVS diode manufacturing services as well as high-voltage (HV) CMOS for PMICs (power management integrated circuits). Near the end of 2020 the company will be releasing a 130 nm BCD (Bipolar-CMOS-DMOS) with NVM (non-volatile memory) process flow to enable power management SoCs critical for enabling smart devices across multiple categories.

For more information, please visit: www.skywatertechnology.com/.