Solitron is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge Power Modules.
Solitron has developed this power module series to maximize the benefits of SiC, with a unique robust, simple, and cost-effective module format. The 37mm x 25mm x 9mm outline is a fraction of the size and weight of competitive modules. The integrated format maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
The SD11906/07/56/57 are half bridge configurations with two 1200V, Low RDS(on) 13mΩ SiC MOSFETs. The SD11906 and SD11956 feature freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs inside the module. The pinout configuration separates the power bus from the gate and source controls to ease and simplify board layout. All four devices feature continuous drain current of 105A.
This series is designed for demanding applications such as avionics based electromechanical actuators and power converters. With operating temperatures of -55°C to 175°C, construction includes copper baseplates and Alumina Nitride insulators ensuring TCE matching and high thermal transfer. Isolated, integrated temperature sensing enables high level temperature protection on the SD11906 and SD11907.
Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.
Additions to the series which include enhanced performance, alternative pin outs and higher levels of integration are targeted for release later this year.
Samples are available from stock, evaluation boards are also available.
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