Super Junction 600V MOSFETs combine leading RDS(ON)•A characteristics with integrated high-speed diodes

Date
05/14/2013

 PDF
porn porntube

Toshiba Electronics Europe announced at PCIM the European launch of a family of 600V MOSFETs with integrated high-speed intrinsic diodes. Based on the company's fourth generation 600V super junction DTMOS IV process, the new MOSFETs will improve power efficiency in switching power supplies, micro inverters, adaptors, and photovoltaic inverters. The new TK16A60W5, TK31J60W5 and TK39J60W5 achieve significant improvements in power efficiency by combining the industry's leading RDS(ON)*A (ON-resistance area) characteristics with reverse recovery times. In addition, the use of a single epitaxial process ensures only small increases in ON resistance and recovery times at high temperatures. The TK16A60W5 is supplied in a TO-220SIS package. Maximum current rating (ID) is 15.8A and RDS(ON) is 0.23?. The diode shows an excellent typical reverse recovery time (trr) of 100ns. In comparison, the standard version shows a trr of 280ns. Both the TK31J60W5 and TK39J60W5 are supplied in a TO-3P(N) package and have maximum currents of 30.8A and 38.8A respectively. Maximum respective RDS(ON) ratings (VGS = 10V) are just 0.099? and 0.074? . Typical trr diode characteristics are 135ns and 150ns. Variants in TO-247 packaging are scheduled to be available by autumn 2013. Super junction MOSFETs offer ultra-low ON resistance without power loss penalties. Using Toshiba's state-of-the-art single epitaxial process, the fourth generation super junction 600V DTMOS IV MOSFET series provides a 30% reduction in RDS(ON)•A - a figure of merit (FOM) for MOSFETs - compared to its predecessor, DTMOS III. A reduction in RDS(ON)•A, makes it possible to house lower resistance chips in the same packages, helping to improve the efficiency and reduce the size of power supplies. Toshiba

RELATED