Texas Instruments launches first 80-V half-bridge GaN FET module (PSDtv)



In this episode of PSDtv Texas Instruments demonstrates their GaN-based power solution at APEC 2015 for Power Systems Design. The industry’s first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype consists of a high-frequency driver and two GaN FETs in a half-bridge configuration – all in an easy-to-design quad flat no-leads (QFN) package.

Texas Instruments