GOLETA, Calif.—Transphorm Inc. announced availability of its third-generation (Gen III) 650-volt (V) GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications.
The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end product designs now in production or soon to be released. Gen III devices being released include the TP65H050WS 50 mΩ FET and TP65H035WS 35 mΩ FET, both available in standard TO-247 packages.
Transphorm in the Field = Product Development Advantages
Transphorm is one of the only GaN semiconductor companies owning each critical stage of FET development. Given this, insight gained during customer development projects along with Gen I and Gen II platforms can be applied to the GaN-on-Si technology to increase the transistor’s quality, reliability, and performance. Data is often gathered that also informs development techniques that can simplify design complexity, increase safety margin, and/or positively affect power system performance.
Research that lead to Gen III produced both opportunities: increased benefits now inherent to the GaN technology itself and new design methods augmenting the FET’s performance. Further, the design and fabrication innovations enable Transphorm to reduce device price, generating even more ROI.
Technologically, the incorporation of a new MOSFET along with other design modifications enable Gen III devices to deliver:
· An increased threshold voltage (noise immunity) to 4 V from 2.1 V for Gen II, eliminating the need for a negative gate drive.
· A gate reliability rating of ±20 V; an11 percent increase versus Gen II.
As a result, switching is quieter, and the platform delivers performance improvement at higher current levels with simple external circuitry.
Regarding learned design techniques, Transphorm published elegant solutions for oscillation suppression in its app note 0009: Recommended External Circuitry for Transphorm GaN FETs. Example recommendations include the use of DC-link RC snubbers and switching-node RC snubbers that add further stability without adverse impact on efficiency. Notably, the solutions can benefit half-bridge and bridgeless totem-pole PFC topologies.
Gen III 650 V Product Line Details
Availability: Currently shipping
· TP65H050WS 50 mΩ TO-247 unit price: 8.86 USD (sold in 1000 unit quantities)
· TP65H035WS 35 mΩ TO-247 unit price: 11.55 USD (sold in 1000 unit quantities)
Optimal output ratings: 1.5 kW to 5.0 kW applications depending on design criteria
· Broad industrial
· Data centers
· Merchant power supplies
Supporting design resources:
· Evaluation kit
· SPICE model
· Quality white paper