Toshiba Electronics Europe (TEE) expanded its U-MOS VIII-H Series with two low-voltage N-channel power MOSFETs. The devices are suited for applications including quick chargers, switched-mode power supplies and DC-DC converters. Both 100V N-channel power MOSFETs support the quick charger 4.5V logic level drive.
Along with the popularity and evolution of quick chargers, higher performance power MOSFETs are required for use in secondary-side rectifiers. The new MOSFETs utilize Toshiba’s low-voltage trench structure process to achieve industry-leading on-resistance and high-speed performance.
The advanced semiconductor structure improves the fundamental Figure-of-Merit (FoM) (RDS(ON) * Qsw ), thereby improving performance in switching applications. Output losses are improved by the reduction of output charge, contributing to higher system efficiency.
The TPH6R30ANL offers current handling (ID) up to 45A and RDS(ON) as low as 6.3mOhm while the TPH4R10ANL is rated at 70A and 4.1mOhm.
Support for 4.5 V logic level drive enables buffer-less drive from the controller IC, contributing to reducing power consumption. Furthermore, the devices are compatible with the high output voltage power supplies required in USB 3.0 related applications. The standard 5x6mm package SOP-Advance will help reduce PCB space required.
Both devices are available for immediate shipment.
Toshiba Electronics Europe