DESIGN CENTERS: INDUSTRIAL
Toshiba Launches 3300V SiC MOSFET Module for Industrial Equipment
10/09/2026
High surge-current capability helps improve system reliability
Toshiba Launches 3300V SiC MOSFET Module for Industrial Equipment
Toshiba Electronics Europe GmbH (“Toshiba”) today announced the expansion of its line-up with the launch of IX800FXF2YMS4, a dual SiC MOSFET module. The new module offers high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. It also helps improve system efficiency through reduced conduction and switching losses.
The IX800FXF2YMS4 uses Toshiba’s improved third-generation silicon carbide (SiC) MOSFET devices. The module has a drain-source voltage (VDSS) rating of 3300V and a drain current (DC) rating (ID) of 800A.
The new IX800FXF2YMS4 has an I2t rating of 300kA2s for its diode at initial channel temperature of 175°C, VGS=-6V, a single half-sinewave 10ms pulse, and F.R.=1%. This indicates the diode’s surge current capability under abnormal operating conditions. An optimised SiC MOSFET design enables this performance, helping to improve equipment reliability.
In addition, the module’s low conduction and switching losses contribute to improved equipment efficiency and can help reduce cooling requirements. Typical drain-source on-voltage (sense) (VDS(on)sense) is 1.4V at ID=800A, VGS=+20V and Tch=25°C. Typical turn-on and turn-off switching losses (Eon and Eoff) are 185mJ and 175mJ, respectively, at VDD=1800V, ID=800A and Tch=175°C.
The new product is housed in the iXPLVTM (Intelligent Flexible Package Low Voltage) package, which uses silver (Ag) sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175°C. Its launch expands Toshiba’s line-up of SiC MOSFET modules in the iXPLV package to four products.
Toshiba will continue to expand its line-up of SiC MOSFET modules for industrial equipment and provide a wider range of product options to meet various equipment specifications and applications. Toshiba will also contribute to improved reliability, higher efficiency and more compact industrial equipment.
Read more about the new IX800FXF2YMS4 SiC MOSFET module on Toshiba’s website.
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