Toshiba offers 1800 V RC-IGBT with monolithic integrated diode


Integrated, high-temperature device minimises component count while meeting performance demands of latest voltage resonator inverter switching designs

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The GT40WR21 1800-V N-channel RC-IGBT is rated for 40 A and features a saturation voltage of only 2.9 V.

Toshiba Electronics Europe has announced an IGBT with an integrated reverse recovery diode that offers a voltage rating of 1800 V. The GT40WR21 is well suited for induction heating and induction cooking designs and other applications demanding high-performance voltage resonator inverter switching. The GT40WR21 1800-V N-channel RC-IGBT (reverse conducting IGBT) consists of a freewheeling diode monolithically integrated into an IGBT chip. The TO247-equivalent package TO-3P (N) measures just 15.5 x 20.0 x 4.5 mm. Ultra high-speed switching is supported by a typical IGBT fall time of only 0.15 μs. Toshiba rates the new device for a collector current, IC, of 40 A. The RC-IGBT can handle peak currents of 80 A for 1 ms. Typical saturation voltage at 40 A is only 2.9 V. Maximum collector power dissipation at 25 °C is 375 W. Toshiba rates the integrated diode for a forward current of 20 A and a peak current of 80 A for 100 μs. As with previous models in Toshiba's N-channel IGBT family, the GT40WR21 can support high-temperature operation with a maximum junction temperature, TJ, of 175 °C. Low turn-off switching losses ensure high-efficiency operation. Toshiba Electronics Europe