Toshiba starts first mass production of 15nm NAND flash memories

Date
04/23/2014

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15-nanometer (nm) process technology will apply to 2-bit-per-cell 128-gigabit NAND flash memories

Toshiba has acheived 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba’s NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba’s previous flagship process. The second stage of Fab 5 is currently under construction, and the new technology will also be deployed there.

Toshiba has achieved the world’s smallest class chip size with the 15nm process plus improved peripheral circuitry technology. The new chips achieve the same write speed as chips formed with second generation 19 nm process technology, but boost the data transfer rate to 533 megabits a second, 1.3 times faster, by employing a high speed interface.

Toshiba is now applying the 15nm process technology 3-bit-per-cell chips, and aims to start mass production in the first quarter of this fiscal year, to June 2014. The company will develop controllers for embedded NAND flash memory in parallel and introduce 3-bit-per-cell products for smartphones and tablets, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).

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