Toshiba's automotive high-side N-channel power MOSFET gate driver can block reverse current flow

Date
02/16/2016

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N-channel Power MOSFET gate driver

Toshiba Electronics Europe has announced a new high-side N-channel Power MOSFET gate driver that can be controlled by 3.3-logic input. It has short-circuit protection/diagnosis functions and a feature to prevent the reverse current flow to itself in case of reverse battery situation. TPD7104AF is designed for automotive applications, such as power connect/disconnect switches in start/stop systems, semiconductor relays in ECUs (Electronic Control Units) and junction boxes in 12V battery system.

By combining a TPD7104AF gate driver and an N-channel power MOSFET, a semiconductor relay can be easily created thanks to its built-in charge pump. By adding a shunt resistor, the short-circuit protection and diagnosis functions can also be utilised.

The TPD7104AF features a very low output leak current for reverse battery condition: IREV=-1uA (min) (@ Tj=25°C). Housed in a compact PS-8 package the device measures just 2.8mm x 2.9mm.

Toshiba Electronics 

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