Establishes vital milestone in development of GaN devices
Transphorm has announced the JEDEC qualification of the company's TPH2006PS GaN HEMT on SiC substrate, making it the industry's first qualified 600 V HEMT device. The TPH2006PS, based on the company's patented high-performance EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs, today. The TO-220-packaged device features RDS(on) of 150 m?, Qrr of 42 nC, and high-frequency switching capability that enables compact, lower cost systems. Transphorm's efficient, compact, and easy-to-use power devices simplify the design and manufacturing of a wide variety of electrical systems and products, including motor drives, power supplies, and inverters for solar panels and electric vehicles. Transphorm
