These new devices provide new levels of high-voltage power performance in the fast growing data center server, 5G base station, and electric vehicle markets, where they will be used in power supplies, telecom rectifiers, and on-board chargers respectively. The new devices will appeal to designers who prefer a 3-lead, TO220 or D2PAK package option, yet are still looking to enhance power performance in power-factor correction circuits, LLC resonant converters, and phase-shifted full-bridge converters.
Unique to UnitedSiC’s UJ3C and UF3C FET portfolio is its true “drop-in replacement” functionality. Designers can significantly enhance system performance, without the need to change gate drive voltage, by replacing their existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices with the UnitedSiC FETs.
Both series of SiC FETs are based on UnitedSiC’s unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device that has standard gate-drive characteristics. As a result, existing systems upgraded with the UnitedSiC “drop-in replacement” FETs can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In the case of new designs, the UnitedSiC FETs deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size, and cost of passive components, such as magnetics and capacitors.
The three-leaded, industry-standard TO220-3L package offers enhanced thermal characteristics made possible by UnitedSiC’s sintered-silver packaging technology. New products available in this package include the UJ3C device with RDS(on) values of 30 and 80mohms, and the UF3C device with an RDS(on) spec of 40mohms.
The three-leaded, industry-standard D2PAK-3L targets surface mount designs and is certified to IPC and JEDEC’s Moisture Sensitivity Level 1. New products available in this package include the UJ3C device with RDS(on) specs of 30 and 80mohms, and UF3C devices with RDS(on) specs of 30 and 40mohms.