Vincotech, a supplier of module-based solutions for power electronics, announced the launch of a new, deeply integrated Intelligent Power Module for 600 V applications. The flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz.
The high-speed F5 IGBT, paired with the silicon carbide boost diode in the PFC circuit, not only delivers impressive performance, it also drives down the cost of external passive components. The current rating of this new CIP (converter + inverter + power factor correction) topology housed in an integrated power module is also impressive: 10 A @ 80° C heat sink temperature.
The deeply integrated flowIPM 1B CIP 600 V module enables manufacturers to slash their overall system's size, cost, and time to market. It also features an inverter gate drive with a bootstrap circuit for high-side power supply, as well as emitter shunts (30 mΩ) for vastly improved motion control.
The new flowIPM 1B CIP 600 V modules come in 17 mm flow 1B housings. Versions in the 12 mm housing, with Press-fit pins and with phase-change material are available on request. Samples may be sourced on demand from our usual channels.
Vincotech’s flowIPM 1B CIP
Vincotech power modules