Vishay expands 650V N-Channel power MOSFET Series with devices offering RDS(on) to 30 mohms



Vishay Intertechnology added additional 650 V power MOSFETs to its E Series family of devices. These 22 new devices in eight different packages offer an extended on-resistance range from 30 m? to 600 m? at 10 V and broaden the series' maximum current ratings from 6 A to 105 A. Based on the next generation of Vishay Siliconix Super Junction Technology, the 650 V E Series MOSFETs allow the company to offer extended headroom for applications that require additional input-voltage safety margin in its renewable, industrial, lighting, telecommunications, consumer, and computing markets. The devices bring the total number of 650 V E Series MOSFETS to 26. All E Series devices offer ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, uninterruptable power supplies (UPS), battery chargers, LED lighting, semiconductor capital equipment, adaptors, and solar inverters. The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant. Samples of these new power MOSFETs are available today, with lead times of 16 to 17 weeks for production orders. Pricing for U.S. delivery only starts at $5.89 in 1,000-piece quantities. Vishay Intertechnology