Vishay's New Dual 20V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry's Lowest On-Resistance: 54 m? at 4.5V in 2mm x 2mm Footprint

Vishay Intertechnology, Inc. introduced a new dual 20V p-channel TrenchFET® Gen III power MOSFET with an 8V gate-to-source voltage featuring the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The new SiA923EDJ will be used for DC/DC converters, as well as for charger and load switches in handheld devices such as smartphones, MP3 players, tablet PCs, and eBooks. The MOSFET's lower on-resistance translates into lower conduction losses, saving power and prolonging battery life between charges in these devices. The SiA923EDJ offers an ultra-low on-resistance of 54m? at 4.5V, 70m? at 2.5V, 104m? at 1.8V, and 165m? at 1.5V. The closest competing p-channel device with an 8V gate-to-source rating features on-resistance of 60m? at 4.5V, 80m? at 2.5V, 110m? at 1.8V, and 170m? at 1.5V. These values are 10%, 12%, 5%, and 3% higher, respectively, than the SiA923EDJ. The MOSFET's on-resistance ratings down to 1.5V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry. The SiA923EDJ's low on-resistance also means a lower voltage drop at peak currents to better prevent unwanted undervoltage lockout events. The compact 2mm by 2mm PowerPAK SC-70 package is half the size of the TSOP-6, with comparable or better on-resistance and the ability to dissipate 65% more power under the same ambient conditions. The SiA923EDJ is 100% Rg tested, is halogen-free in accordance with IEC 61249-2-21, and is compliant to RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2500V. The SiA923EDJ complements the previously released 20V SiA921EDJ p-channel MOSFET with a 12V gate-to-source maximum voltage rating. With the release of the SiA923EDJ, designers can now choose between the higher gate drive voltage of the SiA921EDJ or a device with a lower threshold voltage and lower on-resistance. Samples and production quantities of the new SiA923EDJ TrenchFET power MOSFET are available now, with lead times of 14 to 16 weeks for larger orders. www.vishay.com