Date
02/18/2015
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Vishay Siliconix SiA466EDJ 20V n-channel TrenchFET power MOSFET
Vishay Intertechnology released a new 20V n-channel TrenchFET power MOSFET in the ultra-compact thermally enhanced PowerPAK SC-70 package. Providing increased power density and reliability for portable electronics, the Vishay Siliconix SiA466EDJ offers the industry's highest package-limited continuous drain current for a 20V MOSFET in the 2mm by 2mm footprint area, and it is the only such device with a VGS rating of ±20V to provide integrated ESD protection.
The SiA466EDJ's 25 A package-limited continuous drain current is 13% higher than the closest competing device. In load switch applications, the high current rating provides an additional safety margin for large in-rush currents and fault conditions including short circuits. The MOSFET's 2500 V integrated ESD protection prevents static damage from handling or human body contact.
The device released today is a versatile solution for power management in portable equipment designs. The combination of a high current rating and excellent on-resistance times gate charge figure of merit (FOM) optimizes synchronous buck converters and load switches in wireless and fast battery chargers, smartphones, tablets, notebook computers, and e-locks.
To increase efficiency in high-frequency switching applications, the SiA466EDJ's low on-resistance of 9.5mΩ (10 V), 11.1mΩ (6 V), and 13.0mΩ (4.5 V) reduces conduction losses, while its low 6.3nC typical gate charge and 0.9Ω gate resistance minimize switching losses. The MOSFET is 100% RG-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiA466EDJ are available now, with lead times of 13 weeks for large orders. Pricing for U.S. delivery only starts at $0.32 per piece.
