Wolfspeed, A Cree Company and a leading supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24 in Long Beach, Calif., is recognized as the leading North American technical gathering dedicated to the applied power electronics industry. In addition to their exhibition, Wolfspeed engineers will be presenting new research and leading application panels as part of the conference program.
Exhibiting in Booth #1633, Wolfspeed will demonstrate an evaluation board that enables power electronics design engineers to quickly implement the company’s breakthrough 900V SiC MOSFETs and an evaluation unit utilizing high-performance SiC power modules for three-phase inverter applications.
“We’re excited to offer the industry’s first 900V SiC MOSFET portfolio, especially our exclusive SiC-optimized surface-mount packaged devices,” said Guy Moxey, Wolfspeed’s senior director of power products. “Our latest evaluation board allows design engineers to quickly and easily evaluate the quality and performance of these MOSFETs for themselves.”
Wolfspeed will showcase its portfolio of leading-edge 900V SiC MOSFETs in the surface mount 7L-D2PAK package, and demonstrate a pre-assembled PCB evaluation board that allows design engineers to evaluate SiC MOSFET switching waveforms, gate driver performance, and circuit protection features to quickly prototype a SiC power converter. The evaluation board, which is currently available through authorized distributors, contains two 900V C3M MOSFETs with separate Kelvin sources configured in a flexible half-bridge circuit capable of prototyping a synchronous buck or boost inverter. This represents an optimal board layout, short circuit protection, and thermal management using an isolated heatsink to evaluate any 7L-D2PAK 900V Wolfspeed™ MOSFET.
Wolfspeed will also demonstrate a new high-performance three-phase power evaluation unit that dramatically reduces the development time required to implement SiC power modules in a three-phase inverter. Using the company’s soon-to-be released CAS300M12HM2 SiC power module and gate drivers, the evaluation unit provides a modular, configurable circuit design using standard components to rapidly optimize three-phase SiC power module designs for performance, efficiency, thermal management, and circuit protection.
On Wednesday, March 23, at 2:00pm (Room 104A), Wolfspeed Business Development and Program Manager, Jeffrey Casady, will present an industry-first performance achievement with a paper entitled “Record-Low 10mΩ 900V SiC MOSFET in TO-247,” authored by himself, Vipindas Pala, Gangyao Wang, Brett Hull, and Scott Allen. Presented as part of APEC’s “Advances in Wide Bandgap Devices” session, the presentation describes how Wolfspeed’s 900V SiC MOSFET achieves an industry-record-low specific ON resistance and RDSON temperature coefficient, which enable the development of discrete switching devices that far exceed the current densities of super junction MOSFETs.
In addition, Wolfspeed CTO John Palmour will co-chair a technical session entitled “Power Semiconductors Enabling Next-Generation Applications,” consisting of a series of presentations designed to showcase the potential for advanced wide bandgap power semiconductors in power electronics applications. This session is scheduled for Thursday, March 24, from 8:30 – 11:30am (Room 203AB).