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Figure 1. Infineon StrongIRFET™ and OptiMOS™ power MOSFET 20-300 V technologies
Professor Naira Hovakimyan from the Department of Mechanical Science and Engineering (MechSE) at UIUC
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Figure 1. Cross-section view of Infineon’s CoolGaN™ GIT device structure
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Figure 1. Comparison of planar and trench MOSFET structure
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Figure 1. Suitability of Si, SiC, and GaN for power supply applications
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Figure 1. Examples for extrinsic defects in an amorphous layer, mathematically modeled via a local thinning effect in the gate-oxide of SiC devices
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Figure 1. A 5 V converter with a simple EMI filter at the input passes CISPR 25 Class 5
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Figure 1: A dual-channel architecture to achieve HFT = 1
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Figure 1: A MHEV 48V system with three paralleled MOSFETs in a symmetrical loop on the PCB face (Source: Author)
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Figure 1. Typical B-H curve from positive saturation to negative saturation. When H is zero there exists Br which requires -Hc to return to zero. The area within the loop is core loss per cycle
