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Notable & Newsworthy

 



 

 

Notable & Newsworthy

December 2015
On December 18, 2015, President Obama signed into law the Consolidated Appropriations Act, 2016 (H.R. 2029), which includes multi-year extensions for federal tax incentives for wind and solar generation facilities and lifts the 40-year-old ban on crude oil exports from the United States. The $1.1 trillion spending
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Date:
12/29/2015
The U.S. Department of Energy today released energy efficiency standards for new rooftop air conditioners, heat pumps, and furnaces that heat and cool more than half of America’s commercial floor space. Together, they represent the largest energy and pollution savings of any rules issued by the agency since
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Date:
12/18/2015
French researchers develop sodium-ion battery prototype

Prototype of a sodium-ion battery

A prototype of a sodium-ion battery has just been revealed by the RS2E, a French network bringing together researchers and industrial actors. This technology, inspired by the lithium-ion batteries already used in portable computers and electric vehicles, could lead to the mass storage of intermittent renewable
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Date:
12/09/2015

Renesas' on-chip SRAM enables real-time imaging in autonomous cars

The new SRAM is optimized for use as video buffer memory in automotive infotainment SoCs

Renesas Electronics, a premier supplier of advanced semiconductor solutions, announced its successful development of a new dual-port on-chip static random access memory (SRAM) for in-vehicle infotainment system-on-chips (SoCs) in the 16 nanometer (nm) and later generations. The new SRAM is optimized for use
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Date:
12/09/2015
The TEV Project (Tracked Electric Vehicles) has been heralded as 2015’s Best Innovation Project by the Smart Transportation Alliance (STA), the not-for-profit global leader driving transportation infrastructure innovation. The prestigious accolade, set up by STA, headquartered in London, celebrates
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Date:
12/09/2015
Leti's local-strain techniques in FD-SOI fabrication to improve next-gen performance & energy use

Stress profile from 2D Raman extractions for Si MESAs after BOX creep process with 50 nm thick SiN

CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed at the same, or lower, power consumption, and improve performance. The local-strain solutions are dual-strained technologies: compressive SiGe for
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Date:
12/08/2015
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