Power Passives & Discretes
August 2019
Click image to enlarge
Figure 1: Comparison of Superjunction transistor, SiC MOSFET, and GaN HEMT
The commercial availability of Superjunction transistors 20 years ago, challenged and finally proved wrong the limitations of conventional silicon-based transistors with respect to on-state resistance. What was regarded as revolutionary at that time is standard today. Today there is not a single transistor from
. . . Read More
Date:
08/31/2019
Anup Bhalla, Vice President Engineering, UnitedSiC
Ultra-High Voltage SiC and Supercascodes
New applications are emerging that require high voltage switch technology which is significantly lower in balance-of-system costs and operating losses than silicon IGBT and IGCT technology. This spans a wide range from solid state transformers, MW motor drives,
. . . Read More
Date:
08/20/2019
The core characteristic of the TRI line is a sophisticated reinforced isolation system which is able to withstand high test voltages (9000 VDC for 1s and 5000 VAC for 60s) and working voltages (1000 VACrms). Complementing this isolation characteristic is a high Common
. . . Read More
Date:
08/09/2019
Archives
