SemiQ’s high-performance 1200V SiC modules are designed to operate reliably in high-frequency and high-power environments.
Geoff Breed, Vice President Marketing TTI, Inc. – Europe
ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr).
EPC GaN FETs leverage drivers and controllers by Analog Devices to simplify GaN design, increase efficiency, reduce cooling cost.
Farnell Adds Murata’s Latest DC-DC Converters
Connected and software-defined vehicle features.
Hidetoshi Shibata, CEO of Renesas
Multiple SiTime clocks and oscillators are used throughout the cloud and datacenter.
Scientific visualization of the AI-guided assembly of a novel metal organic framework with high carbon dioxide adsorption capacity and synthesizable linkers. Building blocks, predicted by generative AI, are shown on the left, while the final AI-predicted structure is shown on the right.
A New Way to let AI Chatbots Converse All Day Without Crashing
Protective caps for binder's 670- and 770-series cable connectors reliably protect the components against any ingress of dust and liquids when unmated.
Alpha and Omega Semiconductor has announced the AONA66916, a 100V MOSFET packaged in a top and bottom side cooling DFN 5 x 6 package.
ROHM has added a lineup of compact 600V Super Junction MOSFETs – the R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4.
Making AI a Partner in Neuroscientific Discovery
New AI Tool Discovers Realistic 'Metamaterials' with Unusual Properties
There is no Proof that AI can be Controlled, According to Extensive Survey
Würth Elektronik extends MagI³C-FISM family
Researchers at the USC Center for Generative AI and Society and the USC Rossier School of Education investigated teachers’ perspectives on ethics around AI for the first report to be published by the center.
PI introduces InnoSwitch5 offline flyback switcher IC
Click image to enlarge
Figure 1: Doped silicon transistor cross section compared to GaN HEMT
