Wearables & Nanopower

September 2021
Packaging design avoids known flip-chip mounting challenges
The new resistor features a standoff construction that offers an improvement over regular flip chip technology.   The FRFS0402 is ideally suited for use in telecommunication network equipment (including 5G, downhole data center, or fiber optics), medical equipment (including pace makers or hearing-
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Date:
09/16/2021
Infineon and Panasonic accelerate GaN technology development
Gen2 offers higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed
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Date:
09/16/2021
IQRB-2 rubidium oscillator handbook available now summarising key test data
The handbook summarises tests undertaken: from temperature stability and short-term stability to supply pushing and more.   The IQRB-2 fills the gap between the IQRB-1 and the IQRB-3; the IQRB-1 delivers a superb price performance ratio, whereas the IQRB-3 offers an exceptional phase noise performa
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Date:
09/16/2021
Precision-Adjustable Current Limit Power Switch
Streamlining power system design and assuring ongoing reliability, this automotive-compliant device provides a controlled and protected power path. It is rated to handle continuous load currents of up to 1.5A. Key applications include protection of vehicle USB ports and ECU supply rails, and infotainment and telem
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Date:
09/16/2021
GaN Gate Driver Boosts Speed, Flexibility, and Integration
The output is closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs.   Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V gate-source voltage (VGS) on GaN devices to e
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Date:
09/16/2021
MagI³C-FDSM-36-V family extended with 12 V output voltage
The power module in a SIP-3 package represents a cost-effective solution to meet the requirements for the real-world voltage transients of a 24 V industrial power architecture. The new module operates from 16 to 36 VIN and generates a fixed output voltage of 12 V with current up to 1 A.   The FDSM
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Date:
09/16/2021
Gate Driver Improves EconoDUAL IGBT Module Performance by 20%
The new drivers improve the performance of multiple parallel EconoDUAL modules by 20%, allowing users to eliminate one of every six modules from power inverters and converter stacks. In addition to saving the cost of the driver and module, this reduces control complexity and costs related to modules, wiring, hardware,
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Date:
09/16/2021
Integrated 3-Phase MOSFET Gate Driver Maximizes Battery Life
The TMC6140-LA 3-phase MOSFET gate driver integrates all three bottom shunt amplifiers to provide a complete motor drive solution with 30-percent improved power efficiency, while simplifying design by reducing component count by half when compared to similar solutions.   The TMC6140-LA is optimized for performan
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Date:
09/16/2021
Renesas Shows Dialog Synergies with 39 Winning Combinations
The Japanese company took that opportunity to host a press conference to explain the reasons for the acquisition further and to launch 39 of the company’s Winning Combinations to demonstrate how the Dialog portfolio meshes with Renasas products to allow Rensas to compete in new areas and applications. The fi
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Date:
09/06/2021