Wearables & Nanopower

May 2023

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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET

Combining Lowest RDS(on) + SMT for Space-Limited, High-Performance Apps

Pete Losee, Senior Engineering Manager – Power Devices, Qorvo

The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much

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Date:

05/30/2023

APEC 2024

APEC 2024 Announces Call for Technical Program Paper Digest Submissions

APEC 2024, to be held in Long Beach, California, from February 25-29, 2024, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. APEC is now accepting paper digest submissions for the Technical Program. Since APEC 2024 wil

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Date:

05/29/2023

TRACO POWER’s new TRI 1 and TRI 1SM

1 watt DC/DC converters with 480 VAC isolation voltage

The core characteristic of the TRI 1(SM) series is a sophisticated reinforced isolation system which is able to withstand high test voltages (8000 VDC for 1s and 3000 VAC for 60s) and working voltages (480 VACrms). Efficiencies up to 84% allow safe operation from –40°C to +85°C without derating.

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Date:

05/10/2023