Wearables & Nanopower
May 2023
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing mu
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Date:
05/30/2023
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TRACO POWER’s new TRI 1 and TRI 1SM
The core characteristic of the TRI 1(SM) series is a sophisticated reinforced isolation system which is able to withstand high test voltages (8000 VDC for 1s and 3000 VAC for 60s) and working voltages (480 VACrms). Efficiencies up to 84% allow safe operation from –40°C to +85°C without derating.
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Date:
05/10/2023
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