Wearables & Nanopower

May 2023
Combining Lowest RDS(on) + SMT for Space-Limited, High-Performance Apps

Click image to enlarge

Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET

The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing mu
. . . Learn More
Date:
05/30/2023
­1 watt DC/DC converters with 480 VAC isolation voltage

TRACO POWER’s new TRI 1 and TRI 1SM

  The core characteristic of the TRI 1(SM) series is a sophisticated reinforced isolation system which is able to withstand high test voltages (8000 VDC for 1s and 3000 VAC for 60s) and working voltages (480 VACrms). Efficiencies up to 84% allow safe operation from –40°C to +85°C without derating.
. . . Learn More
Date:
05/10/2023

 

-->