Automotive

SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, today launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs,

International Rectifier has launched a family of automotive-qualified 600 V IGBTs optimized for variable speed motor control and power supply applications used in electric and hybrid vehicles. The new devices cover a broad current range and offer a short circuit rating of ≥ 5μs, low Vce(on) and

Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and

Linear Technology Corporation announces the H-grade version of the LTC3872, a small footprint 550kHz fixed frequency step-up DC/DC controller that is specified over a -40°C to150°C junction temperature range. The LTC3872 accepts a 2.5V to 9.8V input voltage range and can produce an output voltage as

Its more than 10 years since the market introduction of Avago technologies first smart gate driver. At that time it was the world’s first integrated IGBT gate driver optocoupler with inbuilt fault detection and feedback functionality. The use of DESAT fault protection techniques was well known even