Notable & Newsworthy
    Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom applications

    600-V GaN FET Supports Applications up to 10 kW

    10/30/2018

    DALLAS – Texas Instruments (TI) announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.
     
    TI’s family of GaN FET devices provides a smart alternative to traditional cascade  and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.  
     
    Key features and benefits of the LMG3410R050, LMG3410R070 and LMG3411R070  Smaller, more efficient solutions: TI’s integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns.  System reliability: The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and shortcircuit conditions. Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.
     
    These devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1,000-unit quantities.
     
    Texas Instruments

    www.TI.com

    Related

    Power Systems Design

    146 Charles Street
    Annapolis, Maryland 21401 USA

    Power Systems Design

    Published by Power Systems (PSD) serves all aspects of the Power Electronics market including but not limited to Power Conversion, Power Management, Intelligent and Embedded Motion, Automotive, Renewable Energy, Energy Efficiency and Lighting. PSD is published 10x per year in English with separate print editions for Europe and North America and is published 6x per year in China. PSD Apps are available for Android & iOS. Additionally qualified power engineering professionals may subscribe and receive PSD daily PowerSurge newsletters.