Advanced Power Electronics, a leading manufacturer of MOS power semiconductors for DC-DC power conversion applications, has launched an asymmetric-dual N-channel enhancement mode power MOSFET targeting synchronous buck dc/dc converter power designs. Packaged in a small 3mm square PMPAK®3x3, the AP6950GYT comprises a "high-side" control MOSFET (CH-1) and a "low-side" synchronous MOSFET (CH-2), providing a compact solution optimised for synchronous buck applications. Drain-Source breakdown voltage (BVDSS) for both channels is 30V, while on-resistance is low at 18m? (CH-1) and 10.5m? (CH-2) According to Ralph Waggitt, the President and CEO of Advanced Power Electronics, "our MOSFETs provide the designer with cost-effective performance whilst retaining the best combination of fast switching, ruggedized device design, and low on resistance." Advanced Power Electronics
