Devices Provide Drop-in Replacement for Micron EOL Single-Die 8Gb DDR3L SDRAMs
SAN CARLOS, Calif. — Alliance Memory introduced new dual-die 8Gb DDR3L SDRAMs that are pin-for-pin drop-in replacements for and fully compatible with end-of-life, single-die 8Gb DDR3Ls from Micron Technology Inc.
Featuring a DDR architecture, the AS4C1G8D3LA and AS4C512M16D3LA provide speed of 10ns, extremely fast data rates of 1866Mbps, and clock rates of 933MHz. Operating from a single +1.35V power supply, with backward compatibility to 1.5V, the SDRAMs are optimized for main memory applications in laptops, desktops, servers, and embedded / industrial designs. The devices are available in commercial (0°C to +95°C), industrial (-40°C to +95°C), and automotive (-40°C to +105°C) temperature ranges.
The AS4C1G8D3LA and AS4C512M16D3LA support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.
Learn more about Alliance Memory's offering of single- and dual-die 8Gb DDR3L SDRAMs at https://www.alliancememory.com/micron-eol-8g-ddr3l-sdrams-now-available-direct-from-alliance-memory/.
Samples and production quantities of the dual-die AS4C1G8D3LA and AS4C512M16D3LA are available now, with lead times of six to eight weeks. Pricing depends on density, configuration, and order size.
