Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 100 Volt, 30 milliohm Power Transistor

Date
09/05/2011

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Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC's second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free. The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN FET provides significant performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor. Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include hard-switched and high frequency circuits such as isolated DC-DC power supplies, point-of-load converters, and class D audio amplifiers. "With the introduction of the EPC2007 we continue to add to our industry-leading eGaN FET portfolio providing power design engineers the opportunity to increase efficiency and reduce size of their power conversion systems when compared with silicon-based MOSFETs," noted Alex Lidow, co-founder and CEO. In 1k piece quantities, the EPC2007 is priced at $1.31 and is immediately available through Digi-Key Corporation at digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en Design Support An application note detailing the performance improvements of the EPC2007 eGaN FET can be found at epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

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