EPC expands eGaN FET Family with 150V power transistor

Date
09/19/2013

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Efficient Power Conversion Corporation introduced the EPC2018 as the newest member of EPC's family of enhancement mode gallium nitride power transistors. The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package. Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds. "The EPC2018 is an excellent complement to our existing family of eGaN FETs. The low on resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications," noted Alex Lidow, co-founder and CEO. In 1k piece quantities, the EPC2018 is priced at $6.54 EPC

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