EPC upgrades development boards with enhancement-mode eGaN FETs using dedicated drivers from TI

EPC (Efficient Power Conversion) has announced the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC's enhancement-mode eGaN FETs. These boards demonstrate how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective. The EPC9003 development board is a half bridge configuration containing two 200-V EPC2010 eGaN FETs with a 5-A maximum output current using the LM5114 low-side gate driver optimized for GaN devices from Texas Instruments. The EPC2010 is for use in applications such as solar microinverters, class-D audio amplifiers, PoE (Power over Ethernet), and synchronous rectification. Additionally, EPC announced the availability of the EPC9006 development board containing two 100 V EPC2007 eGaN FETs with 5-A maximum output current. This board uses the LM5113 from Texas Instruments, a 100-V half-bridge driver optimized for GaN transistors. The LM5113 on this board is packaged in a 2 x 2 BGA package allowing for a compact power stage with the driver and two eGaN FETs. Applications benefiting from the performance of the EPC2007 eGaN FET include high-speed DC-DC power supplies, PoL converters, class-D audio amplifiers, hard-switched, and high-frequency circuits. Both the EPC9003 and the EPC9006 simplify the evaluation process of eGaN FETs by including all critical components on single 2" x 1.5" boards that can easily connect into any existing converter. In addition, there are various probe points on the boards to facilitate simple waveform measurement and efficiency calculation. Quick-Start Guides are included with both development boards for reference and ease of use. EPC has priced the EPC9003 and EPC9006 development boards at $95.00 each. These development boards, like all EPC products, are available for immediate delivery from Digi-Key. EPC