Infineon introduces TO-leadless package for high-current applications up to 300A



Infineon Technologies introduced a TO-Leadless package offering reduced package resistance, significantly smaller size, and improved EMI behavior. It contains the latest OptiMOS™ MOSFET generation for applications with high power and reliability requirements such as forklift, light electric vehicles, eFuse, PoL (Point of Load) and telecom systems. The new TO-Leadless package has been designed for high currents up to 300A. Due to its low package resistance it enables the lowest R DS(on)in all voltage classes. The 60 percent smaller package size compared to D 2PAK 7pin enables a very compact design. TO-Leadless shows a substantial reduction in footprint of 30 percent and requires less board space for example in forklift applications. The 50 percent reduced height offers a significant advantage in compact applications such as rack or blade servers. Moreover low package parasitic inductances result in an improved EMI behavior. "With TO-Leadless Infineon is the first semiconductor company introducing a 0.75m? 60V MOSFET. This reduces the number of parallel MOSFETs in a forklift application and increases power density", said Richard Kuncic, Senior Director Low Voltage Power Conversion at Infineon Technologies. "This package offers our customers significant advantages for high power applications where highest levels of efficiency and reliability are desired." In addition, TO-Leadless comes with a 50 percent bigger solder contact area which leads to lower current density. This helps to avoid electro migration at high current levels and temperatures, resulting in improved reliability. Unlike other leadless packages TO-Leadless offers an optical inspection due to tin plated grooved leads. The new package is the best choice for high power applications where highest efficiency, superior reliability, best EMI behavior as well as best thermal behavior are required. Samples of TO-Leadless are available now in 30V (0.4 m? max.), 60V (0.75 m? max.), 100V (2.0 m? max.) and 150V (5.9 m? max.) with production devices available in the third quarter 2013. Infineon