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    Low On-Resistance, High-Speed Switching Expanded Lineup of Power Device N-Channel MOSFETs

    Low On-Resistance, High-Speed Switching Expanded Lineup of Power Device N-Channel MOSFETs

    01/10/2025

    ­Torex Semiconductor Ltd. has introduced the power MOSFETs XPJ101N04N8R and XPJ102N09N8R as part of a new series of power devices.

    In recent years, the demand for reduced power consumption, miniaturization, and enhanced efficiency has grown in industrial equipment and automotive applications. To address these market needs, Torex has strengthened its MOSFET technology. These MOSFETs specifically designed for 48V DC motors used in industrial equipment, data centers, and servers, these products feature a 100V breakdown voltage design that balances high performance with cost-efficiency

    The XPJ101N04N8R achieves a maximum on-resistance of 4.4mΩ, while the XPJ102N09N8R achieves 9.4mΩ. This low on-resistance reduces energy losses and contributing to improved overall system efficiency. With an outstanding Figure of Merit (FOM), these MOSFETs are ideal for applications requiring high-speed switching characteristics. They can be used in a variety of applications, including DC motors and switching circuits.

    Both products are packaged in DFN5060-8L (6.0 x 4.9 x h1.1mm), contributing to device miniaturization. Additionally, they comply with EU RoHS directives and are Pb-free, making them environmentally friendly.

    Torex remains committed to develop products that meet market needs and contribute to creating a more sustainable and prosperous society.

    For more information, go here

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