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MOSFET Platform Engineered for Superior Switching and EMI Performance

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SUNNYVALE, Calif. – Alpha and Omega Semiconductor Limited (AOS) announced the release of AOTF190A60L, the first product in the new aMOS5 HV MOSFET platform.  This device provides high-efficiency performance in an easy-to-use solution optimized for server power supplies, high-end computers, charging stations and other high-performance applications.  aMOS5 reduces the on-resistance ‟RDS x A” per unit area by 30% versus the previous generation, enabling lower conduction losses in the application.  It also enables future HV product offerings to fulfill the market trend of higher power density in a new, smaller and more efficient package.

Additionally, aMOS5 significantly improves switching performance compared to major competitors; AOTF190A60L offers lower total gate charge with much shorter switching plateau time, which helps reduce switching losses.  The new product is packaged in a full-molded TO-220F and has a maximum RDS(ON) of 190mohm.

aMOS5 was engineered to provide superior  EMI performance by optimizing parasitic parameter behavior.  The following waveform comparison shows how the EMI is controlled, with a suppressed reverse recovery current (Irr) and a much smoother voltage ramp up during the device turn off.

Pricing and Availability

The AOTF190A60L is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $2.24.

For more information, please visit www.aosmd.com.

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