Navitas Semiconductor announced the first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN monolithically-integrated 650V platform. Combining GaN power FETs with GaN logic and drive circuits enables 10x-100x higher switching frequency than existing silicon circuits, making power electronics smaller, lighter and lower cost. A new generation of high frequency, energy efficient converters is being enabled for smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and datacenters.
“GaN has tremendous potential to displace silicon in the power electronics market given its inherent high-speed, high-efficiency capabilities as a power FET”, says Dan Kinzer, Navitas CTO & COO. “Previously, that potential was limited by the lack of equally high performance circuits to drive the GaN FETs quickly and cost effectively. Navitas has solved this remaining challenge to unlock the full potential of the power GaN market. With monolithic integration of GaN drive and logic circuits with GaN power FETs, the industry now has a path to cost-effective, easy-to-use, high-frequency power system designs.”
CEO Gene Sheridan added “The last time power electronics experienced a dramatic improvement in density, efficiency and cost was in the late 70s when silicon MOSFETs replaced bipolar transistors, enabling a transition from linear regulators to switching regulators. A 10x improvement in density, 3x reduction in power losses and 3x lower cost resulted a short time thereafter. A similar market disruption is about to occur in which GaN power ICs will enable low-frequency, silicon-based power systems to be replaced by high-frequency GaN with dramatic improvements in density, efficiency and cost. This is an exciting time for the industry.”
Navitas will introduce the AllGaN platform and GaN Power ICs in a keynote titled “Breaking Speed Limits with GaN Power ICs” at the Applied Power Electronics Conference (APEC) on Monday 21st March.