Nextgen devices improve switching efficiency, increase reliability and reduce EMI
Nexperia announced its NextPower 100 V family of power MOSFETs which delivers low reverse recovery charge (Qrr) and includes parts that are qualified to 175°C in the LFPAK56 (PowerSO8) package.
NextPower 100 V MOSFETs are Nexperia’s latest generation parts recommended for high efficiency switching and high reliability applications. With 50% lower RDS(on) and strong avalanche energy rating, they are ideally suited for power supply, telecom and industrial designs, especially suiting USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors. The devices feature low body diode losses with QRR down to 50 nano-coulombs (nC) - resulting in lower reverse recovery current (IRR), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time.
Comments Mike Becker, Product Manager for Power MOSFETs: “Qrr is a frequently overlooked parameter, yet it can have a significant effect on many design aspects. Low spiking means EMI is reduced, while optimised dead-time gives further efficiency gains, which is our driving ambition at Nexperia. We have shown that low Qrr is beneficial to both functions.”
The new NextPower 100 V MOSFETs are available in three packages: TO220 and I2PAK thru-hole devices, and the widely acclaimed LFPAK56 package (SMT). All package variants feature Tj(max) of 175°C, and fully meet the extended temperature requirements of IPC9592, making NextPower 100 V MOSFETs especially suitable for telecom and computing applications.
NextPower MOSFETS are available now, please visit https://efficiencywins.nexperia.com/efficient-products/qrr-overlooked-and-underappreciated-in-efficiency-battle.html
