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P-Channel MOSFET Features Extended Input Voltage Range

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SUNNYVALE, Calif. – Alpha and Omega Semiconductor Limited (AOS) introduced AONR21357, the initial product in this P-Channel family.  The new AONR21357 uses the improved P-Channel MOSFET process to achieve low power loss and reliable startup. The new device rated at -30V drain-source breakdown voltage (BVDss) and -25V gate-source voltage.  It features a maximum on-resistance (RDS(ON)) of 12.3mohm under VGS = -4.5V, and a thermally enhanced 3x3mm DFN package.  The new P-Channel MOSFET is ideal for load switch applications in Notebook Adapter-In/ Battery In sockets.

USB Type-C is becoming the de-facto interface for the latest PCs and mobile designs. With that, the USB-PD standard is implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy. The new MOSFET used as the load switch offers extended input/output voltage range, and is robust and reliable enough to accommodate the possible working conditions. AOS’enhanced P-Channel technology offers robustness toward linear mode operation, and low Miller’s Plateau (<3.5V) to cover the possible USB-PD voltages.

Technical Highlights

The new product family offers various RDS(ON) levels in combination with multiple package options.

Part Number

Package

VDS (V)

VGS (±V)

RDS(ON) (mΩ max)* at VGS =

Available

10V

4.5V

AONR21357

DFN3x3

-30

25

7.8

12.3

Now

AONR21307

DFN3x3

-30

25

12

20

Q4-2017

AONR21321

DFN3x3

-30

25

18

26

Q1-2018

AONS21357

DFN5x6

-30

25

7.8

12.3

Now

AOSP21357

SO-8

-30

25

8.5

13

Now

AONS21307

DFN5x6

-30

25

12

20

Q4-2017

Pricing and Availability

The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks. The unit price of 1,000 pieces is $0.60.

For more information, please visit www.aosmd.com.

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