Power MOSFETs tout fast switching and low on-resistance
Available in SO-8, TO-252 and isolated TO-220CFM packages, the AP9412A Family of N-channel enhancement-mode power MOSFETs from Advanced Power Electronics have a minimum drain-source breakdown voltage of 30V and a maximum RDS(on) of just 6m?. Other characteristics depend on the package chosen. All parts are extremely easy to drive, and are suitable for a range of industrial and commercial applications including low voltage applications such as DC/DC converters. According to Ralph Waggitt, President/CEO, "We specialise in providing parts that simplify the design engineering process and deliver excellent performance at an attractive price level."
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