PSDcast - Mark Moffat of Peregrine on their advanced GaN FET driver

07/14/2016

In this PSDcast Mark Moffat, Peregrine Semiconductor's director of power management, talks to Alix Paultre of Power Systems Design about wide-bandgap semiconductors and Peregrine's new GaN FET driver, the PE29100. Built on Peregrine's UltraCMOS technology, this new GaN driver empowers design engineers to extract the full performance and speed advantages from GaN transistors.

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Jason Lomberg, North American Editor, PSD

Power Systems Design

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Published by Power Systems (PSD) serves all aspects of the Power Electronics market including but not limited to Power Conversion, Power Management, Intelligent and Embedded Motion, Automotive, Renewable Energy, Energy Efficiency and Lighting. PSD is published 10x per year in English with separate print editions for Europe and North America and is published 6x per year in China. PSD Apps are available for Android & iOS. Additionally qualified power engineering professionals may subscribe and receive PSD daily PowerSurge newsletters.

PSDcast - Mark Moffat of Peregrine on their advanced GaN FET driver

Extraordinary AI Performance from -40 to +85°C for Rugged Applications

4792: Outlet 16 A for Flexible Wiring

Renesas' New GaN Charging Solution Delivers 500W of Power to Wide Range of Industrial and IoT Electronics

Applied Power in the Lone Star State

Power Systems Design

Power Systems Design

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