Rad Hard eGaN Power Transistor Die on Ceramic Adaptors


Rad Hard GaN discrete devices on adaptors are optimized to speed the time-to-market for critical applications in commercial satellite space environments.

EPC Space announced a family of Rad Hard enhancement mode power transistors on ceramic adaptorsspanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes. These products demonstrate significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter weight circuitry for critical spaceborne missions.

The die adaptor series provides easy printed circuit board (PCB) mounting for ‘plug and play’ functionality allowing designers to speed the time-to-market for critical applications using Rad Hard GaN transistors. Applications benefiting from the performance and fast deployment of these products include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.

For more information, visit EPC Space.